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Gas-source molecular beam epitaxial growth and characterization of InNxP1−xon InP

✍ Scribed by W. G. Bi; C. W. Tu


Book ID
107457532
Publisher
Springer US
Year
1997
Tongue
English
Weight
815 KB
Volume
26
Category
Article
ISSN
0361-5235

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Gas source molecular beam epitaxy of InP
✍ Jianxin Chen; Aizhen Li 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 154 KB

We report in this paper on high quality InGaAs/InAlAs/InP heterostructure and its application to optoelectronic integrated circuit (OEIC) structures grown by gas source molecular beam epitaxy. Electron mobilities of the modulation doped heterostructure are as high as 1:1 Â 10 4 cm 2 =V s at room tem