PECVD deposition of device-quality intri
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Julio Cárabe; José Javier Gandía; María Teresa Gutiérrez
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Article
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1993
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Elsevier Science
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English
⚖ 269 KB
The combined influence of RF-power density (RFP) and silane flow-rate (q~) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane