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Gas composition dependence of silicon nitride used as gallium diffusion barrier during GaAs molecular beam epitaxy growth on Si complementary metal oxide semiconductor

✍ Scribed by J. A. Walker; K. W. Goossen; J. E. Cunningham; W. Y. Jan


Book ID
112811834
Publisher
Springer US
Year
1994
Tongue
English
Weight
366 KB
Volume
23
Category
Article
ISSN
0361-5235

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