GaN-core/SiOx-sheath nanowires

✍ Scribed by Hyoun Woo Kim; Jong Woo Lee; Hyo Sung Kim; Mesfin Abayneh Kebede

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 1010 KB
• Volume: 203
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2008.04.062

✦ Synopsis

We have fabricated GaN-core/SiO x -sheath nanowires, sheathing the core MgO nanowires by sputtering with Si target. The product has wire-like morphology, regardless of SiO x -sheathing and subsequent annealing. EDX elemental mapping results have coincided with what can be expected for the SiO x -coated GaN nanowires. The core nanowires correspond to a hexagonal GaN structure, whereas the sheath layer is amorphous. Gaussian fitting analysis on the photoluminescence spectra of GaN-core/SiO x -sheath nanowires have exhibited two emission bands peaked at 2.4 eV and 2.9 eV, respectively. We observed that the relative intensity of 2.9 eV-peak to 2.4 eV-peak was increased by the thermal annealing.