## Abstract Wafer‐scale UV nanoimprint and dry etching processes were used to fabricate photonic crystal patterns on an indium tin oxide (ITO) top electrode of GaN‐based green light‐emitting diodes (LEDs). Photonic crystal patterns with pitches ranging from 600 to 900 nm were transferred to the ent
✦ LIBER ✦
GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template
✍ Scribed by Fu, XingXing; Zhang, Bei; Kang, XiangNing; Deng, JunJing; Xiong, Chang; Dai, Tao; Jiang, XianZhe; Yu, TongJun; Chen, ZhiZhong; Zhang, Guo Yi
- Book ID
- 115414100
- Publisher
- Optical Society of America
- Year
- 2011
- Tongue
- English
- Weight
- 902 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1094-4087
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## Abstract The improved performance of a bottom photonic crystal (PC) light‐emitting diode (LED) is analyzed based on internal quantum efficiency (__η__~int~) and light‐extraction efficiency (__η__~ex~). The bottom PC is fabricated by anodized aluminum oxide nanopatterns and InGaN quantum wells (Q