Gallium nitride (GaN) : physics, devices, and technology

✍ Scribed by Verne, Jules; Bishop, Harry

Publisher: Woolworths
Year: 1985
Tongue: English
Leaves: 388
Series: Devices circuits and systems
Edition: Abridged ed
Category: Library

No coin nor oath required. For personal study only.

✦ Table of Contents

Content: GaN High-Voltage Power Devices Joachim Wurfl AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy Yvon Cordier Gallium Nitride Transistors on Large-Diameter Si (111) Substrate Subramaniam Arulkumaran and Geok Ing Ng GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications Keisuke Shinohara Group III-Nitride Microwave Monolithically Integrated Circuits Rudiger Quay GaN-Based Metal/Insulator/Semiconductor-Type Schottky Hydrogen Sensors Ching-Ting Lee, Hsin-Ying Lee and Li-Ren Lou InGaN-Based Solar Cells Ezgi Dogmus and Farid Medjdoub III-Nitride Semiconductors: New Infrared Intersubband Technologies M Beeler and E Monroy Gallium Nitride-Based Interband Tunnel Junctions Siddharth Rajan, Sriram Krishnamoorthy and Fatih Akyol Trapping and Degradation Mechanisms in GaN-Based HEMTs Matteo Meneghini, Gaudenzio Meneghesso and Enrico Zanoni

✦ Subjects

Gallium nitride. Electronics -- Research. TECHNOLOGY & ENGINEERING / Mechanical

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