GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers

✍ Scribed by Mochizuki, K.; Welty, R.J.; Asbeck, P.M.; Lutz, C.R.; Welser, R.E.; Whitney, S.J.; Pan, N.

• Book ID: 114538462
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 210 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.887008