GaInNAsSb by MBE

✍ Scribed by Gail Purvis

• Book ID: 104367422
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 111 KB
• Volume: 17
• Category: Article
• ISSN: 0961-1290
• DOI: 10.1016/s0961-1290(04)00743-4

✦ Synopsis

August's ICMBE, in Edinburgh, Scotland. He explained that while dilute nitride arsenide alloys (GaInNAs) have been pursued for the development of low cost, directly modulated 10GHz 1.3µ m single mode VCSELs, for transmitters, a broader range of devices is needed to get to the end goal of high speed, direct access to the fibre network.

While dilute nitride arsenide alloys (GaInNAs) have been pursued for the development of low cost, directly modulated 10GHz 1.3µm single mode VCSELs, for transmitters, a broader range of devices will be required to get to the end goal of high speed, direct access to the fibre network. Key components in an expanding accessible fibre bandwidth from 1.2-1.6µm also need semiconductor optical amplifiers, high power pump laser for Raman amplifiers and non linear and waveguide elements for full functionality.