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Gain saturation properties of a polarization insensitive semiconductor amplifier implemented with tensile and compressive strain quantum wells

✍ Scribed by Dubovitsky, S.; Mathur, A.; Steier, W.H.; Dapkus, P.D.

Book ID: 119784171
Publisher: IEEE
Year: 1994
Tongue: English
Weight: 292 KB
Volume: 6
Category: Article
ISSN: 1041-1135
DOI: 10.1109/68.275420

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