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Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral intervalλ=3–5 µm

✍ Scribed by N. V. Zotova; S. A. Karandashev; B. A. Matveev; M. A. Remennyi; N. M. Stus’; G. N. Talalakin


Book ID
110120011
Publisher
Springer
Year
1999
Tongue
English
Weight
62 KB
Volume
33
Category
Article
ISSN
1063-7826

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