✦ LIBER ✦

GaAs with very low acceptor impurity background grown by molecular beam epitaxy

✍ Scribed by E.C. Larkins; E.S. Hellman; D.G. Schlom; J.S. Harris Jr.; M.H. Kim; G.E. Stillman

Book ID: 103163706
Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 392 KB
Volume: 81
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(87)90415-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Reduction of the acceptor impurity backg

Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy

✍ Larkins, E. C.; Hellman, E. S.; Schlom, D. G.; Harris, J. S.; Kim, M. H.; Stillm 📂 Article 📅 1986 🏛 American Institute of Physics 🌐 English ⚖ 429 KB

Very high purity GaAs grown by gas sourc

Very high purity GaAs grown by gas source molecular beam epitaxy

✍ J.E. Cunningham; G. Timp; T.H. Chiu; J.A. Ditzenberger; W.T. Tsang; A.M. Sergent 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 339 KB

Characterization of low temperature GaAs

Characterization of low temperature GaAs grown by molecular beam epitaxy

✍ W.C. Lee; T.M. Hsu; J.-I. Chyi; G.S. Lee; W.-H. Li; K.C. Lee 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 271 KB

Low temperature GaAs grown by gas source

Low temperature GaAs grown by gas source molecular beam epitaxy

✍ R. Droopad; K.T. Shiralagi; R.A. Puechner; K.Y. Choi; G.N. Maracas 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 493 KB

Low-frequency noise in GaAs layers grown

Low-frequency noise in GaAs layers grown by molecular beam epitaxy

✍ Munecazu Tacano; Yoshinobu Sugiyama; Takashi Taguchi; Hajime Soga 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 450 KB

Applications of GaAs grown at a low temp

Applications of GaAs grown at a low temperature by molecular beam epitaxy

✍ Umesh K. Mishra 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 519 KB