Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxially (MOVPE) grown n on p HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and CdZn
โฆ LIBER โฆ
GaAs vapor-grown Shockley diodes and semiconductor-controlled rectifiers
โ Scribed by Wronski, C.R.; Nuese, C.J.; Gossenberger, H.F.
- Book ID
- 114590292
- Publisher
- IEEE
- Year
- 1972
- Tongue
- English
- Weight
- 285 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0018-9383
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In the past it has been demonstrated that the carbon concentration of large semi-insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the prese