GaAs metal‐semiconductor field‐effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice

✍ Scribed by Kumar, N. S.; Chyi, J.‐I.; Peng, C. K.; Morkoc, H.

• Book ID: 115462429
• Publisher: American Institute of Physics
• Year: 1989
• Tongue: English
• Weight: 441 KB
• Volume: 55
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.101803