GaAs epilayers containing arsenic clusters: A metal/semiconductor composite

✍ Scribed by Mike Melloch; Jerry Woodall; Nobuo Otsuka; David Nolte

• Book ID: 103986608
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 424 KB
• Volume: 6
• Category: Article
• ISSN: 0961-1290
• DOI: 10.1016/0961-1290(93)90022-g

✦ Synopsis

to demonstrate anew kind of semiconductor composite material with a dispersion of metallic particles with some properties common to good<tuality single crystals. The material is GaAs with arsenic precipitates (GaAs; As). What follows is a summary of the researchers' work.

aware of the virtues of composite cever, with some exceptions, these ualty associated with only those properties useful for mechanical applications. Attempts to engineer new and useful electronic and photonic properties in semiconductor materials via metal/semiconductor composites have met with limited success. The reason is simple: useful crystalline devices usually require semiconductors with relatively low defect densities, while most compositing techniques render semiconductors highly defective.