GaAs-Based Transverse Junction Superluminescent Diodes With Strain-Compensated InGaAs–GaAsP Multiple-Quantum-Wells at 1.1-m Wavelength

✍ Scribed by Shi-Hao Guol; Ming-Ge Chou; Ying-Jay Yang; Chi-Kuang Sun; Jin-Wei Shi

• Book ID: 119805598
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 188 KB
• Volume: 22
• Category: Article
• ISSN: 1041-1135
• DOI: 10.1109/lpt.2010.2047637