✦ LIBER ✦

GaAs-based single electron logic and memory devices using electro-deposited nanometer Schottky gates

✍ Scribed by Hiroshi Okada; Taketomo Sato; Kei-ichiroh Jinushi; Hideki Hasegawa

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 303 KB
Volume: 47
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(99)00215-4

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✦ Synopsis

A series of single electron logic and memory devices based on Schottky in-plane gate (IPG) quantum wire transistor (QWTR) structure are proposed and their feasibilities are investigated. Basic QWTR devices showed excellent Vth controllability.

Multi-dot single electron transistors showed voltage gains larger than unity, showing feasibily for logic applications. Feasibility of a novel single electron memory device using electro-deposited metal dots was demonstrated.