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Ga1−xInxAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD

✍ Scribed by M.A. di Forte-Poisson; C. Brylinski; J. di Persio; X. Hugon; B. Vilotitch; C. Le Noble


Book ID
103167956
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
625 KB
Volume
124
Category
Article
ISSN
0022-0248

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