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Full-Band Monte Carlo Simulation of HgCdTe APDs

โœ Scribed by Francesco Bertazzi; Michele Moresco; Michele Penna; Michele Goano; Enrico Bellotti


Book ID
107456886
Publisher
Springer US
Year
2010
Tongue
English
Weight
532 KB
Volume
39
Category
Article
ISSN
0361-5235

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Full-band Monte Carlo simulation of thin
โœ A.H. You; D.S. Ong ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 148 KB

A full-band Monte Carlo (FBMC) model is developed to simulate the avalanche characteristics of thin InP p C -i-n C diode. The realistic energy band structure of InP used in this model is generated from the local empirical pseudopotential method. The electron and hole ionisation coefficients are fitt