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FT-Raman Studies of Charged Defects Created on Methyl End-Capped Oligothiophenes by Doping with NOBF4

✍ Scribed by Juan Casado; Víctor Hernández; Shu Hotta; Juan T. López Navarrete


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
155 KB
Volume
10
Category
Article
ISSN
0935-9648

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