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Frontispiece: Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes (Phys. Status Solidi A 7/2011)

✍ Scribed by Pernot, Cyril ;Fukahori, Shinya ;Inazu, Tetsuhiko ;Fujita, Takehiko ;Kim, Myunghee ;Nagasawa, Yosuke ;Hirano, Akira ;Ippommatsu, Masamichi ;Iwaya, Motoaki ;Kamiyama, Satoshi ;Akasaki, Isamu ;Amano, Hiroshi

Book ID: 105366489
Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 175 KB
Volume: 208
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201121824

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Development of high efficiency 255-355 n

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

✍ Pernot, Cyril ;Fukahori, Shinya ;Inazu, Tetsuhiko ;Fujita, Takehiko ;Kim, Myungh 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 228 KB

## Abstract We report on the fabrication and characterization of high efficiency ultraviolet (UV) light emitting diodes (LEDs) with emission wavelength ranging from 255 to 355 nm. Epi‐layers of UV LEDs were grown on AlGaN templates with sapphire substrates. Flip‐chip configuration without removing