From weak to strong localization in a ferromagnetic high mobility 2DHG

✍ Scribed by U. Wurstbauer; D. Schuh; D. Weiss; W. Wegscheider

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 441 KB
• Volume: 42
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2009.11.091

✦ Synopsis

Manganese modulation-doped two-dimensional hole systems confined in strained InAs/InGaAs/InAlAs heterostructures were investigated by low-temperature magnetotransport experiments. The study demonstrates quantized transport phenomena in the high field region, weak anti-localization in the low-field region and ferromagnetic ordering in the separated and insulating manganese-doped layer. A significant amount of manganese in the channel of inverted modulation-doped structures causes a strong localization effect with hysteretic-like abrupt resistance changes over several orders of magnitude at very low temperatures.