Violet to Orange Room Temperature Lumine
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B. Damilano; N. Grandjean; F. Semond; J. Massies; M. Leroux
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Article
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1999
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John Wiley and Sons
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English
β 229 KB
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GaN quantum dots (QDs) in AlN matrix were grown by molecular beam epitaxy on silicon (111) substrates using NH 3 as nitrogen precursor. QDs were formed under growth interruption by two-dimensionalΒ±three-dimensional strain induced transition. Their size was controlled by the GaN nominal thickness dep