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From visible to white light emission by GaN quantum dots on Si(111) substrate

✍ Scribed by Damilano, B.; Grandjean, N.; Semond, F.; Massies, J.; Leroux, M.


Book ID
120282980
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
417 KB
Volume
75
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES


Violet to Orange Room Temperature Lumine
✍ B. Damilano; N. Grandjean; F. Semond; J. Massies; M. Leroux πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 229 KB πŸ‘ 1 views

GaN quantum dots (QDs) in AlN matrix were grown by molecular beam epitaxy on silicon (111) substrates using NH 3 as nitrogen precursor. QDs were formed under growth interruption by two-dimensionalΒ±three-dimensional strain induced transition. Their size was controlled by the GaN nominal thickness dep