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From bare Ge nanowire to Ge/Si core/shell nanowires: A first-principles study

✍ Scribed by Peköz, R.; Raty, J.-Y.


Book ID
121450796
Publisher
The American Physical Society
Year
2009
Tongue
English
Weight
893 KB
Volume
80
Category
Article
ISSN
1098-0121

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First-principles study of doped Si and G
✍ H. Peelaers; B. Partoens; F.M. Peeters 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 208 KB

Using density functional theory we calculate the formation energies for B and P doped Si and Ge nanowires which are oriented in the [1 1 0] direction. First the preferential position for the dopants is calculated in fully passivated nanowires. It is found that the dopants prefer the edge or near edg