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Frequency effect on highly sensitive No2 sensors based on RGTO SnO2(Al) thin films

✍ Scribed by G. Faglia; P. Nelli; G. Sberveglieri

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
533 KB
Volume
19
Category
Article
ISSN
0925-4005

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✦ Synopsis

Sn0,(5 at.% Al) thin films have been grown by sputtering with the RGTO technique. The Urn response to NO2 and CO has been examined from d.c. to 4 MHz by means of impedance spectroscopy. Frequence intervals are found where the sensitivity to NO2 is increased with respect to the d.c. value. This property seems to be suitable for a selective detection of the gaseous species, as in sensor arrays.

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H, in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO,(Bi,O,) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn.= (3-S) at.%](97-95) at.%. The two metals