β Scribed by A. Hairie; F. Hairie; B. Lebouvier; G. Nouet; E. Paumier; N. Ralantoson; A. P. Sutton
No coin nor oath required. For personal study only.
A critical assessment is given of the quasi-harmonic approximation, and various approximations to the quasi-harmonic approximation, with regard to predicting the free energy and atomic structure of grain boundaries in silicon at elevated temperatures. The quasi-harmonic results are compared with those obtained by molecular dynamics and thermodynamic integration. It is found that the quasiharmonic approximation yields accurate excess free energies and atomic structures of grain boundaries at 1,000 K. The anharmonic contribution to the free energy that is absent in the quasi-harmonic contribution is virtually the same at a grain boundary in Si and in the perfect crystal. The secondmoment and Einstein approximations to the full quasi-harmonic theory yield unreliable free energies, but reasonably accurate atomic structures. However, excess free energies are quite well described by the Einstein model. It is concluded that the quasi-harmonic approximation works remarkably well in silicon. The simplest approximations to the phonon density of states lead to unreliable results for the free energy, but cancellation of errors occurs to a large extent when excess free energies are computed.
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