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Free electron and binding model for the interface states at semiconductor surfaces

✍ Scribed by H. Flietner


Publisher
John Wiley and Sons
Year
1971
Tongue
English
Weight
98 KB
Volume
47
Category
Article
ISSN
0370-1972

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The interfacial electrical admittance of a semiconductor electrode exchanging majority carriers with a simple redox system is calculated from basic assumptions presented in a previous paper. Direct exchange and surface state mediated exchange are considered. The coupling between the occupancy of the