Francois d’Heurle – scientist, teacher and mentor

✍ Scribed by James M.E Harper

• Book ID: 104306012
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 47 KB
• Volume: 70
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00469-6

✦ Synopsis

Francois d'Heurle has made significant contribu-line gate electrodes. These conductors were formed tions to the fields of materials science and silicon by the polycide process, that required the silicide to technology throughout a 45-year career with the IBM withstand a high temperature oxidation step. Con-Research Division. He obtained a B.Sc. in Engineer-tinued miniaturization of device dimensions required ´íng from the Ecole des Arts et Metiers, Paris, and a the development of the salicide, or self-aligned Ph.D. in Metallurgical Engineering from the Illinois silicide, process for forming low resistance contacts Institute of Technology. He joined IBM in 1958, not to the source, drain and gate electrodes. In 1985, long before the new Thomas J. Watson Research Francois made a critically important contribution to Center was opened in 1961. His earliest contribu-this process by identifying the high-resistivity C49 tions were in defect formation mechanisms, and in phase of TiSi as a precursor to the low-resistivity