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Fractional theory for transport in disordered semiconductors

โœ Scribed by Vladimir V. Uchaikin; Renat T. Sibatov


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
327 KB
Volume
13
Category
Article
ISSN
1007-5704

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โœฆ Synopsis


The article is devoted to theoretical description of charge carrier transport in disordered semiconductors. The main idea of the approach lies in the use of fractional calculus. The physical reasons of introducing fractional derivatives in semiconductor theory are discussed, the process of derivation of fractional differential equations is demonstrated, the tied link of their solutions with non-Gaussian stable processes is shown. The last section of the article contains solutions of some concrete problems: multiple trapping, transient photocurrent and drift mobility, dispersive transport percolation model of semiconductors, transport in bilayer semiconductor and so on. Some numerical results are obtained and their agreement with experimental data is demonstrated.


๐Ÿ“œ SIMILAR VOLUMES


Truncated Lรฉvy statistics for dispersive
โœ Renat T. Sibatov; Vladimir V. Uchaikin ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 464 KB

Probabilistic interpretation of transition from the dispersive transport regime to the quasi-Gaussian one in disordered semiconductors is given in terms of truncated Lรฉvy distributions. Corresponding transport equations with fractional order derivatives are derived. We discuss physical causes leadin