Abstract
While the last decade has been dominated by Berkeley's BSIM3 and BSIM4 models (third generation models), a new type of compact models like HiSIM, SP, MM11 or EKV3 is more and more accepted in the semiconductor industry. These new models are either surface‐potential‐based models or charge linearization models (EKV3) and, as a result, should be regarded as the fourth generation of MOSFET models. Based on the core of the MM11 model, we have developed new concepts to compute the exact value of the surface potential, i.e. accounting for the quantum effects. The model covers all operating regions from accumulation to inversion and is valid for all bias conditions. The VHDL‐AMS implementation of the model is then demonstrated and a representative set of simulation results is presented. The computation of charges, transcapacitances and drain current shows an excellent behaviour in terms of accuracy and speed, while requiring no additional parameter in comparison to a classical model. Comparison with experimental data from a current deep‐submicron technology is also provided. Copyright © 2004 John Wiley & Sons, Ltd.