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Forward gated-diode R-G current method: A simple novel technique for characterizing lateral lightly doping region of LDD MOSFET’s

✍ Scribed by Jin He; Aihua Huang; Xing Zhang; Ru Huang; Yangyuan Wang


Book ID
107502291
Publisher
SP Science Press
Year
2001
Tongue
English
Weight
270 KB
Volume
18
Category
Article
ISSN
0217-9822

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