✦ LIBER ✦
Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
✍ Scribed by Z. Li; T. Schram; L. Pantisano; T. Witters; A. Stesmans; A. Akheyar; V.V. Afanasiev; N. Yamada; T. Takaaki; S. De Gendt; K. De Meyer
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 492 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0167-9317
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