Formation, optical and electrical properties of a new semiconductor phase of calcium silicide on Si(111)
β Scribed by S.A. Dotsenko; K.N. Galkin; D.A. Bezbabny; D.L. Goroshko; N.G. Galkin
- Book ID
- 113846811
- Publisher
- Elsevier
- Year
- 2012
- Tongue
- English
- Weight
- 272 KB
- Volume
- 23
- Category
- Article
- ISSN
- 1875-3892
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Using electron energy loss spectroscopy, Raman spectroscopy, and conductance measurements in the temperature range 20-500 K we have investigated doping of two-dimensional Mg silicide using the Sb surface phase. The doping process was performed in two steps including formation of the Sb surface phase
## Abstract A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si(111) substrates is presented. Two types of films are investigated in this work: InN on AlN/Si(111) and InN on GaN/AlN/Si(111). Their properties are compared to a layer