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Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

✍ Scribed by E. A. Emel’yanov; D. F. Feklin; A. V. Vasev; M. A. Putyato; B. R. Semyagin; A. P. Vasilenko; O. P. Pchelyakov; V. V. Preobrazhenskii

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