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Formation of self-aligned TiSi2 contacts to Si at low temperatures using TiCl4 and SiH4 with selective in-situ predeposition of SixGe1−x

✍ Scribed by G.C. Xing; Mehmet C. Öztürk


Book ID
119125054
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
413 KB
Volume
17
Category
Article
ISSN
0167-577X

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