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Formation of p+-p−-n− junctions in InP by Cd diffusion

✍ Scribed by Chin, A. K.; Dutt, B. V.; Temkin, H.; Bonner, W. A.; Roccasecca, D. D.


Book ID
127304105
Publisher
American Institute of Physics
Year
1980
Tongue
English
Weight
399 KB
Volume
36
Category
Article
ISSN
0003-6951

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Diffusive flow in p-n junctions
✍ Najeeb Siddiqui 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 191 KB

The frequency dependence of forward-biased p-n junctions has been studied using the dielectric spectroscopy of semiconductors (DSS) technique in the frequency range 10-2-104 Hz. The frequency response is found to follow the classical Warburg diffusive process. Data have been analyzed in terms of adm