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Formation of p-n junctions in tellurium-doped AlxGa1−xSb(As) (x = 0.15–0.20) solid solution layers

✍ Scribed by A. P. Vyatkin; V. P. Germogenov; Ya. I. Otman; L. S. Khludkova


Book ID
112431136
Publisher
Springer
Year
1984
Tongue
English
Weight
373 KB
Volume
27
Category
Article
ISSN
1573-9228

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