✦ LIBER ✦
Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 °C by Ohmic contact recess etching
✍ Scribed by W.S. Lau; J.B.H. Tan; B.P. Singh
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 480 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0026-2714
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