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Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

✍ Scribed by Mikihito Takenaka; Shusuke Aburaya; Satoshi Akasaka; Hirokazu Hasegawa; Nikos Hadjichristidis; George Sakellariou; Yasuhiko Tada; Hiroshi Yoshida


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
476 KB
Volume
48
Category
Article
ISSN
0887-6266

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✦ Synopsis


Abstract

We have demonstrated directed self‐assembly of poly(styrene‐b‐dimethylsiloxiane) (PS‐b‐PDMS) down to sub‐10‐nm half‐pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self‐assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub‐10‐nm stripe pattern along variety of grating shape. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010