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Formation of lateral thin-film 700-V insulated-gate bipolar transistors by using retrograde p-well double implantation scheme

✍ Scribed by M.-H. Juang; D.-H. Shen; S.-L. Jang


Book ID
113797868
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
470 KB
Volume
88
Category
Article
ISSN
0167-9317

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