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Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

✍ Scribed by Sawano, K.; Hoshi, Y.; Endo, S.; Nagashima, T.; Arimoto, K.; Yamanaka, J.; Nakagawa, K.; Yamada, S.; Hamaya, K.; Miyao, M.; Shiraki, Y.

No coin nor oath required. For personal study only.

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