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Formation of an oxygen vacancy-dinitrogen complex in nitrogen-doped hafnium oxide

✍ Scribed by Yang, Mino; Bae, Jee-Hwan; Yang, Cheol-Woong; Benayad, Anass; Baik, Hionsuck

Book ID
120063107
Publisher
Royal Society of Chemistry
Year
2013
Tongue
English
Weight
394 KB
Volume
28
Category
Article
ISSN
0267-9477

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## Abstract The formation of an oxygen precipitate denuded zone in nitrogen‐doped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit