𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose

✍ Scribed by Morehead, F. F.


Book ID
125437144
Publisher
American Institute of Physics
Year
1972
Tongue
English
Weight
705 KB
Volume
43
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Relaxation of craters produced by ion bo
✍ R.M. PapalΓ©o; W. Hasenkamp; L.G. Barbosa; R. Leal πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 186 KB

We report on measurements of relaxation times of craters and rims induced by 20 MeV Au ions bombarding PMMA targets at temperatures near the glass transition. PMMA thin films were bombarded at grazing angles and at low fluences ($10 9 cm Γ€2 ). The targets were kept at the irradiation temperature for