𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

✍ Scribed by Lin Chenglu; P.L.F. Hemment; Li Jinhua; Zou Shichang

Book ID
113285765
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
434 KB
Volume
84
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Properties of oxide and nitride layers i
Properties of oxide and nitride layers in aluminium produced by high dose ion implantation
✍ Shigeo Ohira; Masaya Iwaki πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 652 KB

Recent advances in high dose ion implantation The surface properties such as depth profile, techniques have produced silicon-on-insulator chemical bond and structure, and electrical prop-(SOI) substrates for the fabrication of electronic erties of oxide and nitride layers in aluminium devices. Oxyge

Study of low energy high dose nitrogen i
Study of low energy high dose nitrogen implantation in aluminium, iron, copper and gold
✍ Sanghera, H. K.; Sullivan, J. L. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 248 KB πŸ‘ 1 views

To advance the understanding of fundamental physical and chemical processes occurring in ion bombardment of metals, ion beam nitridation of aluminium, iron, copper and gold is studied in the energy range 2-5 keV, at current densities of 1 and 5 lA cm-2, for each ion energy. The concentration proÐles