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Formation mechanism of porous silicon layers obtained by anodization of monocrystalline n-type silicon in HF solutions

✍ Scribed by Valery M. Dubin

Book ID
118364839
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
942 KB
Volume
274
Category
Article
ISSN
0039-6028

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πŸ“œ SIMILAR VOLUMES

Investigation of porous GaAs layers form
Investigation of porous GaAs layers formed on n+-type GaAs by electrochemical anodization in HF solution
✍ Beji, L. ;Sfaxi, L. ;BenOuada, H. ;Maaref, H. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 333 KB

## Abstract The electrochemical etching of n^+^‐type GaAs in a hydrofluoric acid (HF) solution results in the formation of a porous layer. The current–potential characteristic __I__(__V__) of the n^+^‐type GaAs–HF electrolyte interface shows that pore formation started at a breakdown anodic potenti