Formation and Properties of an Oxide Film on an Si3N4Surface under Thermal Oxidation
β Scribed by A. E. Ivanchikov; A. M. Kisel'; V. I. Plebanovich; V. I. Pachynin; V. E. Borisenko
- Book ID
- 110442229
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 267 KB
- Volume
- 32
- Category
- Article
- ISSN
- 1063-7397
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The reaction of \(\mathrm{N}_{2} \mathrm{O}\) with electrons trapped on the surface of hig gives a complex sienat amsine from the \(\mathrm{O}^{-}\)ion in two or more different sites. The \(0^{-}\)ion reacts with oxyen to give \()_{3}^{-}\)chancierised th strime lines at \(g_{1}=2.0147, g_{2}=2.0120