Formation and characterization of self-organized CdSe quantum dots
β Scribed by Kenzo Maehashi; Nobuhiro Yasui; Yasuhiro Murase; Takeshi Ota; Tsuguki Noma; Hisao Nakashima
- Publisher
- Springer US
- Year
- 2000
- Tongue
- English
- Weight
- 984 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0361-5235
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π SIMILAR VOLUMES
Employing two different growth methods: standard molecular beam epitaxy (MBE) and lowtemperature atomic layer epitaxy (ALE) with subsequent annealing, we have obtained highquality quantum dot structures consisting of CdSe embedded in ZnSe. Single dot emission lines are observed in micro-luminescence
Key requirements for the fabrication of semiconductor quantum dots (QD) are their size, size distribution and density. Beyond conventional lithography methods self-organization processes are promising for the realization of QDs. We present a new route for the generation of quantum dots, which in con
Dedicated to Professor Dr. Roland Zimmermann on the occasion of his 60th birthday Few-particle effects of zero-dimensional charge carriers in self-organized quantum dots (QDs) are investigated both experimentally and theoretically. The actual three-dimensional confinement potential is determined by