Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn0.93Mn0.07)O layer
✍ Scribed by Sejoon Lee; Seung-Woong Lee; Yoon Shon; Deuk Young Kim
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 367 KB
- Volume
- 137
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
The As-doped (Zn 0.93 Mn 0.07 )O layer, formed by As + ion implantation and subsequent annealing at 900 • C for 30 s, showed a clear peak from (A o ,X) emission. The sample exhibited the positive charge polarity indicative of p-type conductivity in the rectification measurement. The hole concentration and the hole mobility were determined to be 2.6 × 10 18 cm -3 and of 13.1 cm 2 V -1 s -1 , from Hall effect measurements, respectively. The sample showing the stable p-type conductivity revealed high-T C ferromagnetism persisting up to ∼320 K. At 300 K, the periodic magnetic domain was clearly observed along the in-plane direction but not dependent on the surface morphology. The observed room temperature ferromagnetism is expected to originate from the increase of hole-mediated exchange interactions.