From device characterization to system l
β
P. Colantonio; F. Giannini; R. Giofrè; L. Piazzon; V. Camarchia; M. Pirola; G. G
π
Article
π
2008
π
John Wiley and Sons
π
English
β 506 KB
In this article, the design of a dual-band PA developed in SiGe HBT technology and its system level investigation are presented. Starting from an extensive nonlinear characterization at the device level, by which the optimum load conditions was inferred, an optimized amplifier capable to operate sim