A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o
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Focused ion beam implantation induced site-selective growth of InAs quantum dots
โ Scribed by Mehta, M.; Reuter, D.; Melnikov, A.; Wieck, A. D.; Remhof, A.
- Book ID
- 119959081
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 704 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0003-6951
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We have demonstrated the selective area growth of self-assembled InAs quantum dots (QDs) in the desired regions by using a template composed of InAs QD arrays. These InAs QDs were fabricated by the use of a specially designed atomic force microscope cantilever, referred to as the Nano-Jet Probe (NJP