The substrates were small pieces cut from different, polished, p-doped silicon wafers (specific resistivity 0.1Β± 150 X cm; the different doping levels had no influence on the charge storage behavior). The pieces were cleaned for 2 min in an air plasma before coating. The plasma was generated by a 2
β¦ LIBER β¦
Fluorescent Phasmidic Liquid Crystals
β Scribed by Benjamin P. Hoag; Douglas L. Gin
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 178 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0935-9648
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